| 摘要 |
PURPOSE:To provide an FET which is enhanced in heat dissipating efficiency without using bonding wires and manufactured through a conventional process and where electrodes are directly connected to a conductor plate or a signal line provided onto a small board. CONSTITUTION:A semiconductor chip 1 is provided with a source electrode 1S connected to a conductor board 2, a gate electrode 1G connected to an input terminal, and a drain electrode 1D connected to an output terminal, a small substrate 4 loaded with a microstrip line used for connecting the electrodes 1D and 1G with an input terminal and an output terminal respectively is mounted inside a recess provided to the conductor board 2, and the semiconductor chip 1 is mounted on the small substrate 4 making the electrodes 1S, 1G, and 1D of the chip 1 face downward, wherein the electrodes 1D and 1G are directly connected to a corresponding microstrip line on the substrate 4, and the electrode 1S is directly connected to the conductor board 2. |
