发明名称 |
Triple self-aligned bipolar junction transistor |
摘要 |
A self-aligned process for fabricating high performance bipolar transistors for integrated circuits includes the formation of a collector contact and intrinsic collector region within an opening at the face of a semiconductor substrate. In particular, layers of oxide and polysilicon are formed on the surface of a substrate. An opening is then formed in both layers followed by the implantation of a buried collector region into the substrate at the exposed substrate face through the opening. Polysilicon contacts to the buried layer are then formed on the sidewalls of the opening. These contacts join with the polysilicon layer to form a collector contact. An oxide is then grown on the collector contact. A monocrystalline intrinsic collector is then formed from the exposed substrate face adjacent said collector contact. In this manner, the buried collector, collector contact and intrinsic collector are all formed in a self-aligned manner. Emitter and base regions may then be formed in the intrinsic collector, using techniques to form a completely self-aligned device.
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申请公布号 |
US5382828(A) |
申请公布日期 |
1995.01.17 |
申请号 |
US19940177869 |
申请日期 |
1994.01.04 |
申请人 |
PURDUE RESEARCH FOUNDATION |
发明人 |
NEUDECK, GEROLD W.;BASHIR, RASHID |
分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/732;(IPC1-7):H01L29/73;H01L29/04 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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