| 摘要 |
PCT No. PCT/GB91/02270 Sec. 371 Date Aug. 12, 1993 Sec. 102(e) Date Aug. 12, 1993 PCT Filed Dec. 19, 1991 PCT Pub. No. WO92/12540 PCT Pub. Date Jul. 23, 1992.A semiconductor device in the form of a metal insulator field effect transistor (MISFET) (200) is constructed as a heterostructure of narrow bandgap In1-xAlxSb semiconductor materials. The MISFET (200) is formed from four semiconducting layers (112 to 118) arranged in series as follows: a heavily doped p-type first layer (112), a heavily doped relatively wider bandgap p-type second layer (114), a lightly doped p-type third layer (116) and a heavily doped n-type fourth layer (118). A source (202) and a drain (204) are formed in the fourth layer (118) and a gate (116/205) in the third layer. An n+p- junction (124) is formed between the third and fourth layers and a _p+p- junction (122) between the second and third layers. The second layer (114) provides a conduction band potential energy barrier to minority carrier (electron) flow to the gate (116/205), and is sufficiently wide to prevent tunnelling of minority carriers therebetween. The first and second layers (112, 114) in combination provide a p+_p+ excluding contact to the third layer (116). The n+p- junction (124) between the third and fourth layers (116, 118) is an extracting contact; when reverse biased in operation, this junction (124) extracts minority carriers from the region of the third layer (116) adjacent the collector (118/204). In operation, the third layer (116) incorporating the gate (205) becomes depleted of charge carriers and therefore exhibits greatly reduced leakage current. In consequence, the MISFET (200) has good dynamic range in terms of controllable drain current. The invention also provides bipolar transistors (300, 400 ) and related devices.
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