发明名称 Free standing quantum well structure
摘要 Conventional microfabrication techniques in conjunction with the precise growth of layers of single crystalline materials by epitaxial growth techniques allow the creation of electro-optic microstructures which achieve high reflectivity with only few periods of layer pairs. Standard lithographic techniques are utilized to fabricate quantum wells which are confined on both sides by air, acrylic resin, or vacuum. The quantum wells are fabricated from spatially and compositionally modulated III-V superlattices in which alternate layers of the structures are sacrificed by selective etching. The structures are patterned such that the quantum wells are suspended between support posts.
申请公布号 US5383212(A) 申请公布日期 1995.01.17
申请号 US19930100531 申请日期 1993.07.30
申请人 AT&T CORP. 发明人 KNOX, WAYNE H.;SHUNK, STEPHEN C.;WILLIAMS, MICHAEL D.;ZUCKER, JANE E.
分类号 H01L29/06;G02B5/08;G02B6/12;G02F1/017;G02F1/21;H01L29/15;H01L29/66;H01L33/00;H01S3/1055;H01S5/00;H01S5/183;H01S5/34;(IPC1-7):H01S3/19 主分类号 H01L29/06
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