发明名称 |
HEIZSYSTEM FÜR REAKTIONSKAMMER EINER CHEMISCHEN DAMPFNIEDERSCHLAGSVORRICHTUNG. |
摘要 |
A heating system for use in chemical vapor deposition equipment of the type wherein a reactant gas is directed in a horizontal flow for depositing materials on a substrate which is supported in a reaction chamber on a susceptor which is rotatably driven for rotating the substrate about an axis which extends normally from its center. The heating system works in conjunction with a special heat sensing arrangement and includes an upper heating element assembly, a lower heating element assembly and a heat concentrator mechanism which interact to provide rapid temperature build-up at the beginning of a processing cycle, rapid temperature attenuation at the end of a processing cycle and a controlled flat temperature profile during the processig cycle. |
申请公布号 |
AT116381(T) |
申请公布日期 |
1995.01.15 |
申请号 |
AT19880906646T |
申请日期 |
1988.06.17 |
申请人 |
ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC. |
发明人 |
ROBINSON, MCDONALD;OZIAS, ALBERT, E. |
分类号 |
C23C16/46;C23C16/00;C23C16/48;H01L21/205 |
主分类号 |
C23C16/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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