nrz-modulated semiconductor laser

摘要

The present invention relates to an nrz-modulated semiconductor laser and a method for production of the same. Known lasers have light emission, the intensity scope of which has a high-intensity peak at a specific frequency and further lower-intensity peaks at secondary frequencies located in the vicinity of this specific frequency. The invention specifies a laser structure which limits secondary-frequency emissions to a large extent and therefore sustains high efficiency in current/light conversion. Features of this type are achieved by virtue of a longitudinal periodic variation of the energy band gap of the optically active layer (QACT). A laser with positive modulation of its intrinsic amplification (nrz-modulation) is thereby obtained. <IMAGE>