| 摘要 |
PURPOSE: A driving circuit for a semiconductor memory device is provided to reduce current consumption by minimizing current leakage. CONSTITUTION: The driving circuit comprises: a PMOS(P-channel Metal Oxide Semiconductor) transistor(PM10); an NMOS(N-channel Metal Oxide Semiconductor) transistor(NM10); and drivers(DR1,DR2... DRn). The PMOS transistor either supplies or cuts off a power supply voltage(VDD) which is connected to a source of the PMOS transistor, controlled by a control signal(A) corresponding to either a stand-by or an operation mode in which the signal is applied to a gate of the PMOS transistor. In a stand-by mode, the PMOS transistor turns off, the power supply voltage(VDD) is cut off and the NMOS transistor(NM10) turns on. Thereby a node between the PMOS transistor(PM10) and the NMOS transistor(NM10) is grounded. While in the operation mode, the control signal(A) becomes a logic low level. Therefore, the PMOS transistor(PM10) turns on and the NMOS transistor(NM10) turns off in which a normal operation is carried out.
|
