| 摘要 |
PURPOSE: A method for fabricating a capacitor of a ferro electric RAM is provided to increase a capacitance of the capacitor and to be easy to process by etching a Pt layer used as a storage electrode and a Y-1 layer of a high dielectric film at the same time by use of a TiN hard mask as an etch mask. CONSTITUTION: In a method for fabricating a capacitor of a ferro electric RAM, an interlayer insulator film(10) having a storage electrode contact is formed on a semiconductor substrate in which a predetermined lower structure is formed. After sequentially forming a diffusion stop film, a Pt film for a lower electrode, a Y-1 film of a high dielectric film and a Pt film for an upper electrode, a TiN film for a hard mask is formed on the Pt film for the upper electrode. A hard mask(50a) is formed by etching the TiN film, and then the Pt film for the upper electrode, the high dielectric film and the Pt film for the lower electrode are simultaneously and excessively dry-etched by use of the hard mask as an etch mask.
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