| 摘要 |
PURPOSE: A method for forming a gate electrode is provided to improve a thermal stability and a low resistance property and to simplify manufacturing process by using NH3 plasma. CONSTITUTION: A gate oxide layer(23) is formed on an active region defined by a field oxide layer(22) of a semiconductor substrate(21). A doped polysilicon layer(24) is formed on the gate oxide layer. A Si-N bonding layer(30) is formed on the doped polysilicon layer(24) by using NH3 plasma. A tungsten film(26) and a tungsten nitride layer(25) are formed, and then the resultant structure is annealed by RTA(rapid thermal annealing) at 800-1000°C, in NH3 atmosphere for 10-60 seconds. By selectively etching the tungsten layer, the tungsten nitride layer and doped polysilicon layer, a gate electrode is formed.
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