| 摘要 |
PROBLEM TO BE SOLVED: To enable satisfactory element isolation by embedding an insulation film having a small stress and low permittivity within a trench. SOLUTION: On a silicon substrate 2, a silicon oxide film 3, a poly-silicon film 4 and a silicon nitride film 5 are formed in this order, and a plurality of trenches 6 are formed with a predetermined interval over these films 3 to 5 and the silicon substrate 2. To the part corresponding to each film 3 to 5 at the internal surface of trench 6, a sidewall spacer 7 is formed. On the inside of the trench 6 including the sidewall spacer 7, the silicon oxide film 8 is formed and on the inside of this silicon oxide film 8, a cavity 9 is also formed.
|
