| 摘要 |
PROBLEM TO BE SOLVED: To realize a highly integrated and highly reliable semiconductor device, in which a connecting plug connecting to a impurity region between two mutually adjacent gate electrodes of two field effect transistor is formed, and a method of manufacturing such a semiconductor device with high manufacture yield. SOLUTION: Sidewalls 28 are formed on the side surfaces of gate electrodes 18a, 18b and gate electrode protruding parts 22a, 22b. While a distance L1 between the electrodes 18a, 18b is larger than twice of the length of the bottom part of the sidewall 28, a distance L2 between the protruding parts 22a, 22b is smaller than twice the width of the bottom of the sidewall. As a result, a recess surrounded by the sidewall 28 is formed between the electrodes 18a, 18b, and a first plug 36a is formed so that the bottom of the plug connects to a heavily-doped region 32b.
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