| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, wherein controllability of etching width is enhanced by reducing the differences in shape after a hard mask work due to the density difference in resist patterns. SOLUTION: The temperature of a lower part electrode or a sample stage, on which a semiconductor wafer is placed, is raised from 0 deg.C to between 20 deg.C-30 deg.C, relative to the semiconductor wafer. Since the temperature of an insulating film such as a silicon oxide film, which is a work surface in process by raising the temperature of the lower part electrode, desorption of excessive deposition species 113 sticking to sidewalls 122 and 124 at hard mask etching is promoted.
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