发明名称 |
LASER RADIATING DEVICE AND METHOD/BEAM HOMOGENIZER/ SEMICONDUCTOR DEVICE AND ITS MANUFACTURE |
摘要 |
PROBLEM TO BE SOLVED: To anneal a semiconductor film by laser irradiation with an enough uniformity and a high productivity over a large range of thickness. SOLUTION: A laser irradiating device emits line-shaped laser beams with scanning in the direction of the beam width. The laser beam has a first energy E1 density at a first beam width W1 on the irradiating surface and has a second energy E2 density at a second beam width W2. The second energy density is higher than the first energy density.
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申请公布号 |
JP2000182986(A) |
申请公布日期 |
2000.06.30 |
申请号 |
JP19990284834 |
申请日期 |
1999.10.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA KOICHIRO |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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