发明名称 LASER RADIATING DEVICE AND METHOD/BEAM HOMOGENIZER/ SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To anneal a semiconductor film by laser irradiation with an enough uniformity and a high productivity over a large range of thickness. SOLUTION: A laser irradiating device emits line-shaped laser beams with scanning in the direction of the beam width. The laser beam has a first energy E1 density at a first beam width W1 on the irradiating surface and has a second energy E2 density at a second beam width W2. The second energy density is higher than the first energy density.
申请公布号 JP2000182986(A) 申请公布日期 2000.06.30
申请号 JP19990284834 申请日期 1999.10.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L21/268 主分类号 H01L21/20
代理机构 代理人
主权项
地址