发明名称 |
Opto-electronic integrated circuit and method of manufacturing the same. |
摘要 |
<p>In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate (1), a pin-type photodiode (2) is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor (3) is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom. When the first surface region of the semiconductor substrate is the inner region of a recessed step portion (4), and the second surface region of the semiconductor substrate is the outer region of the recessed step portion, a difference in thickness between the heterojunction bipolar transistor and the pin-type photodiode is absorbed by the depth of the recessed step portion. For this reason, the pin-type photodiode and the heterojunction bipolar transistor are formed to have almost the same surface level. <IMAGE></p> |
申请公布号 |
EP0633610(A2) |
申请公布日期 |
1995.01.11 |
申请号 |
EP19940110418 |
申请日期 |
1994.07.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LIMITED |
发明人 |
DOGUCHI, KENTARO, C/O YOKOHAMA WORKS;SASAKI, GORO, C/O YOKOHAMA WORKS;YANO, HIROSHI, C/O YOKOHAMA WORKS;SAWADA, SOSAKU,C/O YOKOHAMA WORKS |
分类号 |
H01L27/144;H01L31/0224;(IPC1-7):H01L27/144 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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