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经营范围
发明名称
Silicon infiltrated porous polycrystalline diamond compacts and their fabrications.
摘要
申请公布号
EP0374424(B1)
申请公布日期
1995.01.11
申请号
EP19890119634
申请日期
1989.10.23
申请人
GENERAL ELECTRIC COMPANY
发明人
CHO, HYUN SAM
分类号
C04B41/88;C04B35/52;C04B41/50;C04B41/85;C22C26/00;(IPC1-7):C22C26/00
主分类号
C04B41/88
代理机构
代理人
主权项
地址
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