Method of crystallizing amorphous silicon and device obtained by using this method.

摘要

A glass panel coated with a polycrystalline silicon film for use in a LCD, the glass having a softening pt of at least 560[deg] C, is prepd. by heating the glass substrate at not less than 550[deg] C for a time sufficient to effect compaction. A non-crystalline or mixed-phase silicon film is next deposited, after which the coated substrate is heated at not less than 550[deg] C for a time sufficient to bring about complete crystallisation of the silicon. In a modification the silicon film is deposited onto an uncompacted glass substrate, and the assembly then heated at not less than 550[deg] C for a time capable of bringing about both compaction and crystallisation.