| 摘要 |
A semiconductor laser device comprising, a first clad layer (14) of the first conductivity type semiconductor crystal deposited on a first electrode layer (11), an active layer (15), a second clad layer (16) formed of a semiconductor crystal of a second conductivity type, a current barrier layer (18) having a stripe-like current inlet opening (23), a second electrode layer (20) formed of a semiconductor crystal of the second conductivity type, and disposed on the current barrier layer (18) and on the electric current inlet opening. A first electrode (21) is formed on the second electrode layer (20). A second electrode (22) is formed on the bottom surface of the first electrode layer (11). Between the current barrier layer (18) and the second clad layer (16) is formed a photoelectric current barrier layer (19) formed of a semiconductor crystal of the first conductivity type having a larger band gap than that of the active layer (15). This structure is especially useful for devices comprising p-type current barrier layers. <IMAGE> |
