| 摘要 |
PURPOSE:To enhance a polycrystalline semiconductor thin film in grain diameter so as to use it as material for the active region of a semiconductor element by a method wherein a region of an amorphous semiconductor thin film is crystallized into a crystallized region as it is kept at a higher temperature than the other region of the semiconductor thin film that remains amorphous, and thereafter a polycrystalline layer is made to grow all over the surface of the thin film through thermal decomposition. CONSTITUTION:An amorphous silicon thin film 2 is grown on a substrate 1. Light pulses are condensed by a convex lens and turned into an optical beam 4, and the optical beam 4 is made to irradiate the substrate 1 through a slit as the substrate 1 is moved in a direction of an arrow 3 and in another direction vertical to the former so as to enable square regions 5, each 10X10mu<2>, to be alternately crystallized on the amorphous silicon film 2 at both a lateral interval of 50mum and a longitudinal interval of 50mum. Then, a specimen where the regions 5 are crystallized is irradiated with infrared rays radiated from an infrared lamp to selectively heat the crystallized regions 5, whereby the amorphous silicon regions 2 are heated through thermal conduction from the regions 5. A polycrystalline silicon thin film 7 is made to grow through a local hot CVD method till it covers all the surface of the amorphous silicon thin film 2.
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