ARSENIC PASSIVATION FOR EPITAXIAL STICKING OF TERNARY CHALCOGEN COMPOUND SEMICONDUCTOR FILM ON SILICON BASE BODY

摘要

PURPOSE: To provide a laminate for epitaxially depositing a high-quality ternary chalcogenide semiconductor film on a silicon substrate, without requiring an intermediate layer. CONSTITUTION: A laminate comprises a silicon substrate 12, a monolayer 14 of a group V element selected from a group consisting of arsenic, phosphorus and antimony, the layer 14 formed on a surface of the substrate 12, and a II-VI semiconductor epitaxial layer 16 formed on the layer 14. The layer 16 may also be formed on a II-VI semiconductor buffer layer, after the II-VI semiconductor buffer layer has been deposited on the layer 14.