| 摘要 |
The MOS field-effect transistor has a semiconductor substrate of a first conductivity type, a pair of first polycrystalline silicon layers of a second conductivity type different from the first conductivity type which are formed on the semiconductor substrate and separated from each other by a small gap, a pair of diffusion layers of the second conductivity type formed in those regions of the semiconductor substrate which are in contact with the pair of first polycrystalline silicon layers, respectively, a gate insulating film formed to cover the pair of first polycrystalline silicon layers of the second conductivity type and a part of the semiconductor substrate exposed to an outside at the small gap, and a gate electrode formed on the gate insulating film. The nonvolatile semiconductor memory device is arranged by using the MOS field-effect transistor mentioned above.
|
