Methods for the formation of a silicon oxide film

摘要

Disclosed is a method for the formation of ceramic silicon oxide films on substrate surfaces wherein said films are thick, free of cracks and pinholes, and insoluble in organic solvents. These films are formed by coating the surface of a substrate with a silicon resin having the general formula (HR2SiO1/2)X(SiO4/2)1.0 wherein R is selected from the set comprising the hydrogen atom, alkyl groups, and aryl groups, and 0.1