| 摘要 |
<p>PURPOSE: To reduce the thickness of a frame to reduce the required area to the frame by forming a recessed part on a Si plate so as to have a side wall vertical to the lower surface of the Si plate. CONSTITUTION: A thin film (vibrating plate) 2 is precipitated on the upper surface of a monocrystal Si plate 4, and a recessed part 5 is formed, starting from the lower surface of the plate 4. When the side wall of the recessed part 5 is vertical to the lower surface of the plate 4, a frame 3 is formed in the same thickness over the whole cross section. Consequently, in a predetermined size of the vibrating plate 2, a relatively small area is required to the plate 4. In general, a number of sensors are manufactured in one Si wafer, and the cutting surface for separating the sensors is vertical to the surface of the wafer. Since the side wall of the recessed part 5 is parallel to the cutting wall, an adequate expected portion can be suppressed slightly when the wafer is individually separated. The edges 201-204 of the recessed part 5 form a parallelogram, and they are vertical to the 110-lower surface of the plate 4 and within the 111-crystal surface of the plate 4.</p> |
