| 摘要 |
A rapid thermal anneal (RTA) can substantially improve the quality of heteroepitaxial structures such as dielectrics on semiconductors (e.g., CaF2/Si), semiconductors on metal on semiconductor (e.g., Si/CoSi2/Si), semiconductor on semiconductor (e.g., SixGe1-x/Si), or semiconductor on insulator (e.g., Si/A12O3). The RTA involves heating a heterostructure, comprising a single crystal first material substrate with a layer of second material thereon, to an absolute temperature Ta2 for a time ta2, where typically 0.75 Tm2 < Ta2 < Tm2 and 1 < ta2 < 60 seconds, Tm2 being the absolute melting temperature of the second material. The method can produce substantial improvement in such indicators of crystalline perfections as RBS ratio ?min or carrier mobility .mu..
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