| 摘要 |
PURPOSE: To provide a high voltage power MOS transistor which is used for high voltage side drive device application by realizing electrical insulation between a source and a substrate. CONSTITUTION: A high voltage transistor is provided with an SOI(semiconductor- on-insulator) region in which a source and a channel are formed. Drain drift regions 14 and 16 are partially formed in the SOI region and formed in a bulk silicon region partially beyond the SOI region. Also, gates 46 and 48 are coupled with the SOI channel. |
