| 摘要 |
<p>PURPOSE: To provide a semiconductor device containing diffusion barrier layers, having a silylation layer for the surface part formed on a semiconductor wafer and to provide the manufacturing method. CONSTITUTION: The diffusion barrier layers 13 and 15 are formed on a semiconductor wafer 11 and the silytlation layer 19 is formed on the diffusion barrier layers 13 and 15 by a plasma-processing, using silicon hydride or a reactive sputtering method using SiH4 . For forming the metallic layer for the silylation layer 19, wettability between the diffusion barrier layers 13 and 15 and a metal improves and particles are formed large. Then, the step coverage for the contact hole or the via hole of the metal layer increases. When high temperature thermal treatment is executed after the metallic layer has been formed on the silylation layer 19, the reflow characteristic of the metallic layer improves and the reclamation of the contact hole and the via hole is facilitated. Consequently, highly reliably metal wiring can be obtained, and a subsequent sintering process is not required.</p> |
