Method for selectively etching AlGaAs,申请号US19920982194-传众专利搜索

发明名称	Method for selectively etching AlGaAs
摘要	A method for semiconductor device fabrication that uses a mixture of SiCl4, CF4, O2, and He to selectively etch GaAs with respect to AlGaAs. Etch selectivities greater than 300:1 are obtained.
申请公布号	US5380398(A)	申请公布日期	1995.01.10
申请号	US19920982194	申请日期	1992.11.25
申请人	AT&T BELL LABORATORIES	发明人	SMITH, LAWRENCE E.
分类号	H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):H01L21/00;B44C1/22;H01L21/02	主分类号	H01L21/302
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