IT LDD STRUCTURE FOR IG FET AND MANUFACTURING METHOD THEREOF

摘要

sequentially forming a gate insulating film (22), a first conducting layer (23) and a second conducting layer (24) having a rapid oxidation rate on a substrate (21) to etch the layers to form a gate; forming an oxide film (25) on the gate to form an inverse-T shaped gate; removing the oxide film (25) to implant impurities thereinto to form a low concentration region (27); forming and etching an oxide film (28) on the gate to form a spacer (29) on the side wall of gate to implant impurities thereinto to form a high concentration of source and drain region (31); thereby forming the low concentration region between the channel and the source and drain region to loosen the field strength in the device.