| 摘要 |
PURPOSE:To provide a method for analyzing the surface of a semiconductor material when a thin film is grown thereon in which the composition and the structure of atom and electron present on the surface, can be observed while fixing the semiconductor material to a thin film growing unit or other analytic unit. CONSTITUTION:A pulsating ion particle beam of He, Ne, Ar, etc., having energy as low as 3 keV or below is deflected accurately by means of a magnetic field prism 5 and condensed by means of an objective lens 6 before impinging on a sample 7. The ion particles are scattered inelastically by the atoms present on the surface layer and the ion particles scattered in the direction of 180 deg. are detected. The scattered and neutralized particles advance straight to a detector 9 where the ion particles are deflected again by means of the field prism and accelerated between a grid 17 and a detector 10 before the ion particles are detected by the detector 10. The exit angle of scattered ion particles from the field prism 5 can be adjusted finely. This constitution allows downsizing and provides the position and concentration of atom and the chemical bonding state on the surface for any type of atom. |
