| 摘要 |
PURPOSE: To provide a capacitor having new structure for a semiconductor device and a producing method for the same. CONSTITUTION: A storage electrode 105 is composed of a lower part, formed from a single conductive layer and connected to a source region 14 and a body extended upwards from this lower part. The intermediate section of this body has a rugged inner/outer wall for increasing capacitance and is formed in the shape of a vase. A dielectric film 115 is formed on the inner and outer surfaces of a storage electrode 105, and a plate electrode 125 is formed on this electric film 115. The storage electrode 105 is formed from only one conductive layer and used for a valid capacitor region, while including its upper surface, side surface and lower surface as well. Thus, an increase in capacitance is achieved easily, and a reliable capacitor can be provided. |
