| 摘要 |
PURPOSE: To provide a capacitive surface differential pressure sensor and a method for manufacturing it by a microstructure which is manufactured by a dry-removing method, without harmful effects from a capillary force. CONSTITUTION: Doping materials are selectively injected into a substrate for deciding a first etching stop layer, a surface layer of semiconductor materials is deposited on this, and a diaphragm region is decided. A passive state conductive layer is deposited on this, and a diaphragm electrode is prepared. A sacrificial layer is selectively deposited on the diaphragm region. The conductive structural layer is fixed on a surface layer, and a second electrode is prepared. A backside opening which terminates in the first etching stop layer is prepared by selective etching. The first etching stop layer is removed. At least one temporary post is extended from the structural layer to the surface layer. The sacrificial layer is removed, and then a temporary post is removed. |
