| 摘要 |
PURPOSE: To prepare a thin-film semiconductor device through the application of a lithographic technology to a non-planarized device by moving a workpiece with at least two degrees of freedom relative to a beam, so that a semiconductor device pattern is exposed to the beam within a resist. CONSTITUTION: Both a rotary stage 48 and a linear stage 56 are operated under the control of a computer 28. The stage 48 selectively rotates a chuck 44, so that a substrate 40 is rotated about an axis substantially perpendicular to an electronic beam 12. The stage 56 moves linearly along a track 60. Thus, the substrate 40 is selectively moved in both the rotary and linear directions under the beam 12, so that the beam 12 is dropped or injected onto different projected surface regions of the substrate 40. As a result, a thin-film semiconductor device can be prepared through the application of a lithographic technology to a non- planarized device. |
