Insulated gate thyristor with gate turn on and turn off

摘要

An insulated gate thyristor (IGTH) (40,80) that is built on IGBT technology rather than SCR or thyristor technology. The device provides the low on-resistance of a thyristor with the gate turn-on and turn-off capability of an IGBT. The device may be fabricated in a somewhat modified IGBT process, in a cellular (40) or stripe (80) configuration. First the process is modified (by reduced doping) in order to promote (rather than inhibit) latch-up. Second, certain regions (52) are formed without source diffusions to create a lateral MOSFET (T5) that can turn off the latched IGBT.