Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method

摘要

An organic silane compound for forming an antireflection film on the surface of a substrate prior to forming a resist pattern includes a silicon atom, a leaving group bound to the silicon atom and capable of reacting with a hydroxyl group existing in the surface of the semiconductor substrate to form a covalent bond between the semiconductor substrate and the organic silane compound, and a substituent group capable of absorbing far-ultra violet light. The substrate is coated with the organic silane compound. Resist is applied onto the substrate coated with the organic silane compound. The resist is exposed selectively using far-ultra violet light. The resist is exposed.