Nonvolatile semiconductor memory device using a command control system

摘要

A nonvolatile semiconductor memory device using a command control system comprises a protect cell composed of a nonvolatile memory cell, a protect sense amplifier circuit for reading the data from the protect cell, a high-voltage sensing circuit for supplying a voltage during a programmed operation such as a writing or an erasing operation, a protect control circuit for controlling the protect cell, and a control circuit for reading the data from the protect cell and according to the read-out data, controlling the command to the memory cell array.