GROWTH METHOD AND DEVICE OF SILICON SINGLE CRYSTAL

摘要

PURPOSE:To remarkably enhance a silicon single crystal in production efficiency by realizing a method and a device for obtaining a silicon single crystal from a silicon polycrystalline rod through an FZ process carried out once. CONSTITUTION:In an FZ method wherein a silicon crystal is grown, a silicon polycrystalline material rod 110 to 1000mum in grain diameter is partly heated to form a molten band 2, and a static magnetic field of 300 to 1000 gauss is applied to the molten band 2, whereby a silicon single crystal 4 is grown in an FZ process carried out once.