摘要 |
PURPOSE: To provide a thin film transistor, in which surface characteristic between an active layer and a gate insulation film can be made satisfactory and the characteristic can be improved. CONSTITUTION: A semiconductor layer 2 which is an active layer, a first gate insulation film 8, and a second gate insulation film 9 are successively formed on an insulation-transparent substrate 1. Then, patterning is conducted so that the film 9 is remained merely at the active region by using the mask for patterning of the active region, the entire part of the semiconductor layer 2 except the active region is oxidized and isolated by using the film 9 as a mask, and a gate electrode is formed on the film 9 of the formed active region. Then, impurity is ion-implanted into the semiconductor layer 2 by using the electrode as a mask for forming a source region and a drain region, a protecting film is formed on the whole face, contact holes are formed so that the source region and the drain region can be exposed, and a source electrode and a drain electrode are formed, so as to be connected through the contact hole with the source region and the drain region.
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