发明名称 MANUFACTURE OF THIN FILM TRANSISTOR
摘要 PURPOSE: To provide a thin film transistor, in which surface characteristic between an active layer and a gate insulation film can be made satisfactory and the characteristic can be improved. CONSTITUTION: A semiconductor layer 2 which is an active layer, a first gate insulation film 8, and a second gate insulation film 9 are successively formed on an insulation-transparent substrate 1. Then, patterning is conducted so that the film 9 is remained merely at the active region by using the mask for patterning of the active region, the entire part of the semiconductor layer 2 except the active region is oxidized and isolated by using the film 9 as a mask, and a gate electrode is formed on the film 9 of the formed active region. Then, impurity is ion-implanted into the semiconductor layer 2 by using the electrode as a mask for forming a source region and a drain region, a protecting film is formed on the whole face, contact holes are formed so that the source region and the drain region can be exposed, and a source electrode and a drain electrode are formed, so as to be connected through the contact hole with the source region and the drain region.
申请公布号 JPH077157(A) 申请公布日期 1995.01.10
申请号 JP19930285095 申请日期 1993.11.15
申请人 GOLD STAR CO LTD 发明人 KIN KOUKEI
分类号 H01L29/78;H01L21/265;H01L21/316;H01L21/336;H01L21/76;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L29/78
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