发明名称 |
Semiconductor device including semiconductor layer having impurity region and method of manufacturing the same |
摘要 |
A semiconductor device capable of effectively preventing a dielectric breakdown of a gate oxide film without adversely affecting the characteristics of a transistor and a process of manufacturing the same are disclosed. The semiconductor device comprises a SOI film 2 whose upper angular parts are rounded off by sputter etching and a gate oxide film 3 formed on SOI film 2 with an almost uniform thickness. Therefore, electric field concentration in the upper angular parts of SOI film 2 is reduced. Furthermore, the control characteristics of the transistor are enhanced by the uniform gate oxide film 3. As a result, a dielectric breakdown of the gate oxide film is effectively prevented without adversely affecting the characteristics of the transistor. Sputter etching enabling processing at a low temperature is used, so that the upper angular parts of SOI film 2 are rounded off without adversely affecting a semiconductor element formed in the lower layer.
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申请公布号 |
US5381029(A) |
申请公布日期 |
1995.01.10 |
申请号 |
US19920838993 |
申请日期 |
1992.02.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
EGUCHI, KOJI;AJIKA, NATSUO;SUGAHARA, KAZUYUKI |
分类号 |
H01L21/20;H01L21/336;H01L21/768;H01L21/84;H01L27/06;H01L27/12;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L27/01;H01L29/06 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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