发明名称 |
Method of growing single crystal of compound semiconductors |
摘要 |
A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.
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申请公布号 |
US5379717(A) |
申请公布日期 |
1995.01.10 |
申请号 |
US19930063344 |
申请日期 |
1993.05.18 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA, SEIKOH;OZAWA, SHOICHI;KIKUTA, TOSHIO |
分类号 |
C30B15/00;C30B15/22;(IPC1-7):C30B15/28 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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