| 摘要 |
PURPOSE: To provide a void-free metallized vias in a diamond substrate, whose surface within an aperture contains substantially no contaminant by filling the aperture with a heat-resistant metal using a low-pressure chemical vapor. CONSTITUTION: A 100 to 500 μm-thick diamond substrate is prepared. The diamond substrate is a piece of diamond, having at least one via, and a surface of the via is substantially pure. The via is filled with tungsten using a low- pressure chemical vapor, temperature of which ranges from 300 to 900 deg.C and pressure range is from 0.1 to 3.0 Torr. The aperture is constituted in the middle of two opposing surfaces, and its aspect ratio ranges from about 1 to 20. The metal is selected from the group consisting of tungsten, niobium, molybdenum, chromium, titanium, vanadium and tantalum. Tungsten is preferable. |
