SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The semiconductor device comprises; (A) first insulating layer formed on the substrate, in which the portion not being formed a gate pattern is thicker than the portion being formed it; (B) first conductive layer formed the thinner portion of the first insulating layer and of which the both sides has the rised shape; (C) second insulating layer formed on the first conductive layer; (D) second conductive layer formed on the second insulating layer to be lined up; (E) a pair of third conductive layers formed on the exposed first conductive layer and the both sides of the second conductive layer; (F) source/drain region formed on outer side of the second conductive layer and having highter impurity concentration; and (G) source/drain region formed on outer side of the first conductive layer and having lower impurity concentration.