发明名称 ELECTRON SOURCE AND ITS MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a cold-cathode electron source at a low cost, without having to directly handle an extremely fine shape electron emission material, capable of forming a high-density electron emission source using a small quantity of the electron emitting material and to attain high discharge current density at low voltage. SOLUTION: The cold-cathode electron source 10 comprises a cathode electrode 12 laid out at a prescribed interval on a substrate 11, a conductive layer 13 formed at least one layer thereof and keeping a prescribed distance on the cathode electrode 12, and a electron emission source 14 fixed on the surface layer only of the conductive layer 13. The electron emission source 14, owing to the softening and fluidization of the surface layer material of the conductive layer, dampens the electron emission material which is scattered at high density on the surface layer of the conductive layer 13 and fixes itself thereon.</p>
申请公布号 JP2001312954(A) 申请公布日期 2001.11.09
申请号 JP20000131188 申请日期 2000.04.28
申请人 SHARP CORP 发明人 IGARASHI TETSUYA;MATSUURA MASATAKA
分类号 H01J9/02;H01J1/304;(IPC1-7):H01J1/304 主分类号 H01J9/02
代理机构 代理人
主权项
地址