SEMICONDUCTOR LASER STRUCTURE

摘要

The structure includes a n type of first clad layer (AlxGa1-xAs) (11) formed on the GaAs substrate (10), a quantum well active layer (20) having an asymmetric band gap, a p-type of second clad layer (AlxGa1-xAs) (13) on the layer 920), a p-type of GaAs cap layer (14), and electrodes formed on the lower prt of the substrate and the upper part of the cap respectively, thereby having the asymmetric quantum well to increase the coupling efficiency of the electron-hole. The band gap of the active layer has a stepped shape of asymmetric structure.