PACKAGING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method improves the characteristics of the package of the semiconductor device by adopting the metal pattern film instead of conventional wire bonding. The method comprises (a) step for forming the MPFC: a hole is shaped on the both sides of the thin copper layer (20) as the same size with semiconductor chip (1), bump (16) forming process on the both sides of the copper layer (20) after deposition of the dry film, pattern forming process on the both sides of the metal layer (14)(15) by wet etching, insulator layer etching process on the both sides of the copper layer (20); (b) step for connecting the semiconductor chip (1) and lead frame (2); (c) step for plastic molding.