| 摘要 |
The method includes the steps of forming a 1st insulating film (22), a 1st poly-Si film (23) and a 2nd insulating film (24) on the Si substrate (21), removing the film (24) on the inactive region to deposit and etch a 3rd insulating film (25) thereon to form a spacer on the side wall of the film (24) to etch the films (23,22,21) to use the spacer as a mask to form a trench (26), forming a passivation film (27) on the trench to fill a 2nd poly-Si (29) in the trench, oxidizing the partial poly-Si to form a field oxide film (30), and removing the residual films (24,23,22) and spacer to form a final device isolating region (30). The bird's beak is reduced by reoxidizing the poly-Si films in the trench.
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