| 摘要 |
PURPOSE:To make it possible to achieve continuous room-temperature operation and long-life operation by decreasing the operating voltage of a semiconductor laser comprising II-VI group compound, and obtaining the semiconductor laser in green color or blue color having a low operating voltage. CONSTITUTION:A buffer layer 2 made of p-type ZnSe or p-type ZnSSe is provided on a substrate 1 of p-type GaAs through a buffer layer 11 comprising at least one layer of AlGaInP-based material. A laser structure made of II-VI group compound is constituted thereon. |
