| 摘要 |
<p>PURPOSE: To prevent opposite impurity addition from occurring between P<+> - region and N<+> -region by forming a TiSi2 interconnect strap and forming a diffusion barrier from a thin TiN layer among silicide, strap and salicide region. CONSTITUTION: A Si/Ti region is made into silicide by annealing a structure, to which a treatment process is performed in N2 , and on the other hand, exposed Ti becomes TiN. In the configuration of a mutual connect which is provided as a result, a thin barrier layer such as a TiN layer 12 exists under a conductive layer strap like a TiSi2 strap 14. By holding the TiN layer between the interconnect and contacts, the diffusion barrier against the opposite impurity addition of phosphorus can be provided. Thus, heat throughput in following processes can be relaxed.</p> |
