CONDITIONING OF DRY EXHAUST GAS

摘要

PURPOSE: To provide a gas treatment method of an exhaust gas containing nitrogen tri-fluoride (NF3 ) generated from semiconductor manufacturing process. CONSTITUTION: An exhaust gas is introduced into a first and a second stages in a reaction tower 10 containing a hollow annular heater 13. A gas treatment method comprises two processes: a process to expose an exhaust gas to the first stage containing silicon or a silicon-rich alloy or a silicon-rich substance in the reaction tower 10 and a process to expose the gas to the second stage containing calcium oxide or a calcium oxide compound or a calcium oxide containing material or a soda lime containing material. The first stage contains particles made of silicon partially coated with copper, a silicon-rich alloy or a silicon-rich substance.