| 摘要 |
PURPOSE:To obtain graphite thin film, excellent in characteristics, especially at low temperature by forming a graphite thin film by chemical vapor phase growth using an aromatic ketone having a substituent group at ortho position on an aromatic ring as a raw material. CONSTITUTION:In a method forming graphite thin film by chemical vapor phase growth using an organic material as a raw material, an aromatic ketone having a substituent group at either one ortho position on an aromatic ring is used as the organic material. Methyl group is preferably used as substituent group of o-methylarylketones among aromatic ketones and aromatic ketones having relatively small molecular weight are especially preferably used as aromatic ketones. When graphite thin film is especially formed on a substrate consisting of cobalt, nickel, palladium or platinum, graphite thin film excellent in crystallinity can be obtained. |
