Verfahren zur Herstellung eines Halbleiters aus einer Verbindung der Gruppe II-VI

摘要

A method of preparing a Group II-VI (eg. Zn Se) compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of a Group II element (eg. dimethyl zinc) and a hydride (eg. H2Se, H2S) or on organic metal compound of a Group VI element (eg. dimethyl Se, diethyl sulphide) as the raw materials, which comprises repeating alternate introduction of an organic metal compound of a Group II element and a halide gas (eg. HCl) a halogen gas (eg. Cl2) or a mixture thereof. The use of a halide or halogen gas enhances the flatness of the semiconductor thin films grown. <IMAGE>