| 摘要 |
<p>An integrated-circuit package assembly includes a separate silicon substrate (34) to which an integrated-circuit die (32) is fixed. The separate silicon substrate (34) serves as a heat spreader for the integrated-circuit die (32). The separate silicon substrate (34) to which the integrated-circuit die (32) is fixed is packaged in either a molded package body (80) or a cavity-type package body (120). For the molded package body (80), the package body is molded around a leadframe (42), the integrated-circuit die (32), and the separate silicon substrate (34) to which the integrated-circuit die (32) is fixed. For a molded package body (80), the leadframe (42) has bonding fingers formed at the inward ends thereof which are attached to the separate silicon substrate (34) or the leadframe may have a die-attach pad (20) to which is fixed the separate silicon substrate (34). For the cavity-type package (120), the package body includes a mounting surface formed adjacent to a cavity formed therein and the mounting surface has the separate silicon substrate (102) fixed to the top surface thereof. The cavity-type body (120) is formed of a ceramic material or as a multi-layer pringed-circuit board. One or more interposer areas (122) are formed on the top surface of the silicon substrate (102) for attachment of connection wires (125, 127) from the integrated-circuit die (114) or the leadframe (42). A portion of the interposer (72, 122) can extend between the integrated circuit die (32, 114) and the top surface of the silicon substrate (34, 102) to accomodate integrated-circuit dies (32, 114) of various sizes. The interposer includes a layer of oxide (82) formed on the surface of the silicon substrate (34, 102), which layer of oxide is covered with a layer of conductive material (84).</p> |
